Abstract
We used LIF spectroscopy to determine the absolute density and the spatial distribution of Siatoms in a dc and an rf glow-discharge in SiH4-He-Ar. The absolute sensitivity of the fluorescence detection system was calibrated by using Rayleigh scattering by Ar gas. The fluorescence quantum efficiency and the polarization degree of emitted light were measured to estimate the effect of collisions of Si atoms and buffer gas. The spatial distribution of the ground-state Si atom in the dc discharge is compared with that of the excited-state atoms. The distribution of Si atoms in the rf discharge is investigated for two types of electrode configurations.
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