Abstract
The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single layer graphene sheets is still lacking. Chemical Vapour Deposition of graphene on Cu catalytic thin films represents a promising method to reach this goal, because of the low temperatures (T < 950°C−1000°C) involved during the process and of the theoretically expected monolayer self-limiting growth. On the contrary such self-limiting growth is not commonly observed in experiments, thus making the development of techniques allowing for a better control of graphene growth highly desirable. Here we report about the local ablation effect, arising in Raman analysis, due to the heat transfer induced by the laser incident beam onto the graphene sample.
Highlights
Graphene has attracted a major interest in the last few years because of its astonishing electrical (Castro Neto et al 2009; Peres 2010; Peres et al 2006), mechanical (Lee at al. 2008) and chemical properties (Elias et al 2009; Wang et al 2009a), that make it a good candidate for the future development of nanoelectronics devices
Several techniques have been developed in the last years in order to achieve this goal: the most important are the epitaxial growth of graphene by thermal sublimation of SiC
Since Chemical vapour deposition (CVD) synthesis needs a catalyst to activate the chemical decomposition of the carbon precursor used for graphene growth at low temperatures (T < 950°C – 1000°C), the use of many metals (Ir (Coraux et al 2008), Ru (Martoccia et al 2008), Pt (Sasaki et al 2000; Starr et al 2006), Fe (Kondo et al 2010), Ag (Di et al 2008), Ni (Liu et al 2010; Kim et al 2009; Obraztsov et al 2007), Cu (Bae et al 2010; Li et al 2009a; Tao et al 2012) as catalysts during the process has been reported in literature
Summary
Graphene (a single bidimensional layer of carbon atoms arranged in an hexagonal lattice) has attracted a major interest in the last few years because of its astonishing electrical (Castro Neto et al 2009; Peres 2010; Peres et al 2006), mechanical (Lee at al. 2008) and chemical properties (Elias et al 2009; Wang et al 2009a), that make it a good candidate for the future development of nanoelectronics devices. The main properties of this material are nowadays well known from a theoretical point of view, an efficient and highly reproducible method to grow high quality, large-scale area, single layer graphene films, suitable for practical applications, is still lacking. For this reason, several techniques have been developed in the last years in order to achieve this goal: the most important are the epitaxial growth of graphene by thermal sublimation of SiC Many experiments show that such a self-limiting behaviour is hardly observed, since few-layered graphitic structures are usually grown on Cu substrates
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