Abstract
ABSTRACTWhile it is possible to grow epitaxial CoSi2 films of a high quality using UHV technology it is much more difficult to produce films of similar quality under high vacuum and non-“clean room” conditions. Tung et al.1 have however shown that films of a good quality can be produced under these poorer conditions with the aid of a laser anneal of an appropriate power followed by a short thermal anneal. In this paper the role of the laser anneal, and of the (post laser) thermal anneal, in the production of epitaxial films is examined. It appears that the principle role of the laser anneal is to induce the epitaxial CoSi2 formation at the silicon / silicide interface, and that this epitaxial layer then acts as a seed for epitaxial film growth during the subsequent thermal anneal.
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