Laser induced dielectric breakdown in reactive mixture SiF4 + H2

Abstract

Important chemical process of reduction of SiF4 by hydrogen is realized in laser induced dielectric breakdown (LIDB) plasma in a gas mixture of SiF4 and H2. The process may be an alternative to a method of plasma enhanced chemical vapor deposition (PECVD) which is commonly used for production of pure and isotopically pure silicon films. The composition of laser induced plasma in gases SiF4, SiF4 + H2, SiF4 + H2 + Ar at atmospheric pressure is studied and compared to the composition of inductively coupled plasma (ICP) in the same gases but at reduced pressure of 3 Torr. The gaseous products of chemical reactions are inferred from optical emission spectroscopy (OES) and IR spectroscopy. The reaction products of silicon fluoride SiF and fluorosilanes SiHxFy (x, y = 1, 2, 3) in LIDB plasma are observed and confirmed by equilibrium chemistry calculations and simulations of plasma expansion dynamics using a fluid dynamic-chemical plasma model. It is further suggested that chemisorption of fluorinated species like SiFx (x = 1, 2) followed by the surface reaction with H-atoms lead to a formation of silicon-to‑silicon bonds on a substrate surface. A conclusion is drawn that energetic laser induced plasma can prove efficient for one-step PECVD by hydrogen reduction of SiF4.