Abstract
AbstractThis work is a step towards a viable process for poly-SiGe MEMS structural layers deposited at substrate temperatures below 250°C. Laser annealing was used for post-deposition layer treatment to realize poly-SiGe structural layers with the desired electrical and mechanical properties at low substrate temperatures. The technique uses a pulsed excimer laser beam for the local thermal treatment of a SiGe layer deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 210°C. By tuning the laser treatment and the film deposition conditions, 1-1.8 μm thick films having an electrical resistivity as low as 14.1 mΩ∙cm and optimal strain gradient in the range of -4.3×10-6to +6.8×10-6μm-1were realized.
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