Abstract
Abstract Amorphous silicon oxide (a-SiOx) films have been deposited by excimer laser-induced decomposition of an Si2H6N2O gas mixture. The films are characterized in terms of the oxygen composition, hydrogen content, refractive index, electron spin resonance spin density, breakdown strength and interface properties of the silicon metal-insulator-semiconductor structures as a function of the N2O-to-Si2H6 gas flow rate ratio. The annealing effects on the electron spin resonance spin density, breakdown strength and oxide charge density are also studied. Annealing at 450°C was found to be useful for improving the breakdown field and reducing the oxide charge density.
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