Abstract
Chemical etching of single-crystal Si in an NF3 atmosphere is performed by continuous irradiation with an Ar+ laser at 514.5 nm. The etching process proves to be a thermally stimulated chemical reaction between solid Si and NF3 gas. The experimental results show how the depth and width of the etched grooves depend on laser power, scan speed, and gas pressure. The etch rates observed may exceed 25 μm/s.
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