Abstract
Heat-mode lithography has received much attention owing to its capacity of breaking through the diffraction limit and realizing nano-patterning. However, the relatively lower aspect ratio of patterns seriously limits its scope of applications. In the currently available literature, the aspect ratio of submicron structures prepared by this method is less than 0.3:1. In this work, a new two-step development process was proposed to considerably improve the aspect-ratio of micro/nanostructures in the AgInSbTe (AIST) heat-mode resist. An aspect ratio of 1:1 can be kept even for the grating structures with a linewidth/period of 200nm/400 nm. The developed patterns can be transferred to silicon substrates with high fidelity. This simple and effective technique addresses key issues of heat-mode lithography in the manufacture of functional nanostructures requiring high aspect ratio, such as photomasks, templets of nanoimprint, and so on.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
