Abstract
The growth of CdTe epitaxial film on a CdTe substrate using a laser deposition method has been investigated: the beam of a pulsed ArF excimer laser is focused on a CdTe target and the plume of ejected material is collected onto a (111) Zndoped CdTe substrate (4%). From the X-ray diffraction measurements and double-diffraction X-ray analysis, the mirror-like film grown is found to be a homoepitaxial layer. Film thicknesses, deduced from optical profilometry, range between 1.9 and 6.5μm. The few differences that appeared between the photoluminescence spectra of the film and the substrate can be explained by a small composition variation and some defects or impurities in the CdTe that lead to new radiative transitions.
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