Abstract
Experimental studies of the features of the formation of laser-induced periodic nanostructures on the surface of silicon wafers in the zones of action of second, millisecond and nanosecond laser pulses are conducted in the work. The results of microscopic investigations by optical and electron microscopes of periodic structures formed on surfaces with crystallographic orientation (111), (100) are presented. The obtained results can be used to optimize the laser pulse mode for controlled micro- nanostructuring of the semiconductor surface.
Highlights
The technology of micro- and nanostructuring of the surface of semiconductors with the help of high-intensity laser pulses is important for a variety of applications in many fields of science, technology and medicine
This paper presents the results of experimental studies of physical processes that cause the heterogeneous melting of semiconductors and lead to the formation of surface periodic structures in the laser radiation pulse zones
In the process of pulsed laser melting on the surface of the semiconductor there is an inertial motion of the melt, which in the conditions of the action of surface tension forces leads to the formation of certain surface micro- nanostructures (Fig. 1 i)
Summary
Laser Formation of Periodic Micro- and Nanostructureson the Surface of Monocrystalline Silicon.
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