Laser Fired Local Back Contact C-Si Solar Cells Using Phosphoric Acid for Back Surface Field

Abstract

We report on a laser doping process for the formation of a local back surface field (BSF) using phosphoric acid (H3PO4) for n-type passivated emitter rear totally diffused silicon solar cells. The sheet resistance of the BSF layer was varied by changing the H3PO4 concentration. The BSF layer was passivated using SiNx. With the passivated BSF, the LBC solar cell shows an improved open circuit voltage. A laser power of 44 mW with 10 kHz resulted in a 45-Ω/sq BSF layer with effective lifetime of 290 μs and a higher Voc of 623 mV. With the optimized laser parameters, devices with the best electrical results yielded a short circuit current density of 36 mA/cm2 and an efficiency of 18.26%.