Abstract
AbstractThe electron energy levels and the envelope wave functions in inverse GaAs/AlGaAs V‐shaped quantum wells (QWs) are calculated using the transfer matrix method. The influence of applied electric and laser fields on the electronic distribution is investigated. In studied systems, a laser‐induced attenuation for anomalous electric polarization of the excited state is found. Also, an oscillator strength increasing under high‐frequency laser radiation is obtained. The results presented in this article can be useful for novel device applications based on the intersubband transitions of electrons. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2011
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