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Abstract
A laser beam focused beneath a Kelvin probe needle allows for evaluation of laser-induced Volta potential shifts that can be used to identify (ir)reversible structural rearrangements at the sample surface. This work investigates the impact of laser irradiation on different substrate materials and the influence of laser power and wavelength to explore possible additional areas of analytical applications. Complete and instantaneous potential recovery was achieved with a 785 nm beam, whereas inverse and less meaningful potential shifts result for highly reflective Si wafers. Moreover, similarities to photovoltage transients recorded on solar cell devices are discussed.
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