Abstract
The effects of single-pulse ruby laser irradiation have been investigated in Si samples with disorder layers located at a depth of 2000 A from the crystal surface and extending up to 8000 A. This disorder was obtained by implantation with 350 keV N+ to a fluence of 2×1016/cm2. Channeling, diffraction and transmission electron microscopy were used to characterize the structure of the irradiated layers. After 1.5 J/cm2 irradiation the damaged layer reorders partially, while for about 2.0J/cm2 the surface single crystal becomes polycrystalline. At a higher energy density all the material undergoes the transition to single crystal. Calculations based on the liquid model accounts in part for the experimental results.
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