Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires

Abstract

The influence of an intense laser field on shallow-donor states in cylindrical GaAs–Ga1−xAlxAs quantum-well wires under an external magnetic field applied along the wire axis is theoreticallystudied. Numerical calculations are performed in the framework of the effective-massapproximation, and the impurity energies corresponding to the ground state and2p ± excited states are obtained via a variational procedure. The laser-fieldeffects on the shallow-donor states are considered within the extendeddressed-atom approach, which allows one to treat the problem ‘impurity+ heterostructure+ laser field+ magnetic field’ as arenormalized ‘impurity + heterostructure + magnetic field’ problem, in which the laser effects are taken into account through arenormalization of both the conduction-band effective mass and fundamentalsemiconductor gap.