Abstract
Experimental results on laser solid-phase doping of Si, GaAs and InP are presented. Using 1 kW CO 2 laser, we fabricated ultra-shallow p–n junctions and Ohmic contacts with these semiconductors. The impurity distribution into the depth of the doped layers has been studied through the Auger electron spectroscopy (AES). The zero-bias resistance of formed GaAs p–n junctions was ∼10 10 Ω and a typical resistance of nonrectifying contacts with GaAs and InP was 5·10 −7 Ω·cm 2 and 5·10 −5 Ω·cm 2, respectively.
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