Abstract
Type-I quantum-well laser diodes with an active region constituted of GaInAsSb-AlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm2 at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.
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