Abstract
Quantum-confined InGaAs/AlGaAs/GaAs heterostructures for laser diodes emitting at λ=0.98 μm, optimized to provide for reduced radiation divergence in the vertical plane and decreased internal optical losses, have been synthesized by metalorganic-hydride vapor-phase epitaxy. For the obtained laser diodes the far field pattern full width at half-maximum in the vertical plane falls within 16°–19°, the internal optical losses are about 0.7 cm−1, the internal quantum yield amounts to 97%, and the maximum continuous emission power reaches 8.6 W.
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