Laser diode end-pumped continuous-wave Nd：YVO4 self-Raman laser at 1175 nm

Abstract

In this paper, an LD (laser diode) end-pumped continuous-wave Nd:YVO4 self-Raman laser at 1175 nm is reported. The doping concentration and structure of the self-Raman crystals are optimized to reduce the thermal effects of the crystal, and a high-efficient diode-end-pumped continuous-wave self-Raman laser operated at 1175 nm is demonstrated. Finally, the thermal effects are efficiently improved by using a double-end diffusion-bonded composite Nd:YVO4 crystal as a gain medium. An output power up to 3.4 W of the first-order Stokes line 1175 nm is achieved at the incident diode pump power of 25.5 W, corresponding to a diode-to-Stokes optical conversion efficiency of 13.3% and a slope efficiency of 14.6%. The Raman threshold is as low as 2.21 W of diode power at 808 nm.