Abstract
Diffusion from spin‐on arsenic glass by laser melting was investigated. Antireflection effect is exhibited by spin‐on arsenic glass densified at as low as 210°C. Measured sheet resistance is a cosine‐like function of glass thickness. Production throughput and process lattitude are greatly enhanced by effective use of the antireflection effect that is related to the efficiency of laser energy absorption. Laser energy absorption efficiency is related to glass thickness, glass densification temperature, and source concentration. Sirtl etch showed no crystalline defects in the diffused or melted layer. Diffused surface is rough but excellent back contact characteristics were obtained for n‐type silicon substrates.
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