Abstract
A laser diffusion technology to connect poly-silicon conductors for programming VLSI memories is developed. It is based on the fact that a Nitrogen laser pumped dye laser of 510 nm wavelength irradiated on an intrinsic poly-silicon film in a VLSI, having 10 10 2 resistivity, decreases the film resistivity to 10 3 Ω. The mechanism of resistivity reduction is due to the laser heat diffusion of impurity into the intrinsic poly-silicon film. It is also clarified that the passivation film thick-ness on the intrinsic poly-silicon film changes laser reflectivity from zero to over 50%, affecting the condition of the process. The practical processing condition of laser diffusion connection for VLSI programming to enhance chip yield without damage is obtained.
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