Abstract

This paper describes increased chip productivity using a laser dicing technique called stealth dicing (SD), in which optimized aberration correction is applied. By optimizing aberration correction, the dicing street width is reduced to approximately one-fifth of that achievable by blade dicing (BD). With SD, the total number of 1 mm × 1 mm dies singulated from a wafer was 13.3 % higher than with BD. A cost evaluation of the singulation processes using SD and BD is discussed.

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