Abstract
An energy-balance equation for excited carriers and phonons is established for studying the laser cooling of wide-bandgap semiconductors using three-photon excitation process. The power-exchange densities of the system are calculated for different strengths of the excitation filed. When the power-exchange density is positive, it implies laser cooling of the lattice. The effects of initial lattice temperature and field-frequency detuning on the laser-cooling phenomenon under the three-photon excitation process is demonstrated. The power-exchange densities are compared for both laser cooling and heating using nonlinear excitation.
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