Abstract
The depth profile of the complex refractive index of silicon ion (Si<sup>+</sup>) implanted polymethylmethacrylate (PMMA) is studied, in particular PMMA implanted with Si<sup>+</sup> ions accelerated to a relatively low energy of 50 keV and at a fluence of 3.2 × 10<sup>15</sup> cm<sup>-2</sup>. The ion-modified material with nano-clustered structure formed in the near(sub)surface layer of a thickness of about 100 nm is optically characterized by simulation based on reflection ellipsometry measurements at a wavelength of 632.8 nm (He-Ne laser). Being of importance for applications of ion-implanted PMMA in integrated optics, optoelectronics and optical communications, the effect of the index depth profile of Si<sup>+</sup>-implanted PMMA on the profile of the reflected laser beam due to laser-induced thermo-lensing in reflection is also analyzed upon illumination with a low power cw laser (wavelength 532 nm, optical power 10 – 50 mW).
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