Abstract
Results are presented on a method that uses laser-assisted reactivity in a constrained gas expansion to facilitate film growth. The 193 nm output of an ArF excimer laser is focused through a hole in a substrate into a gas pulse consisting of trimethylamine-alane (TMMA). As shown by mass spectral data, laser irradiation of the TMAA clearly results in significant gas-phase reactivity. While no discernible film growth takes place in the absence of laser radiation, the laser readily brings about film growth on a silicon substrate, even though the substrate is held at room temperature and no laser/substrate interactions occur. Atomic force microscopy is used to investigate the surface morphology present in different regions of the deposited film, and chemical composition in those regions is investigated with Auger electron spectroscopy.
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