Abstract

Thin films of CuAlSe 2 have been formed by a laser beam interaction process and analyzed with optical and Auger spectroscopies. It has been found that at low incident power (8.4 W/cm 2) of the argon ion laser (all lines) the compound is formed together with another binary such as Cu 2Se. As the power increases, the second phase disappears and, at 11.7 W/cm 2, reasonably good quality thin films are obtained. It is worth pointing out that the films formed by this technique show defects which need to be eliminated before using them for non-linear optical devices.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.