Laser assembly of CeO2 nanobrushes and their resistive switching performance

Abstract

Memristors in a metal/oxide/metal configuration emerge as an advanced non-volatile information storage technology due to their high operating speed and low power consumption. Understanding the role of the microstructure of the active oxide layer in its resistive switching (RS) performance is scientifically important for revealing the conduction mechanism of oxides, and technically critical for the development of high-performance memristors. Here, self-assembly of vertically aligned CeO2 nanobrushes, a typical RS material, is demonstrated in pulsed laser epitaxy. The growth map of CeO2 is fully explored, and optimized growth conditions for CeO2 nanobrushes are established. Microstructure and crystallinity characterizations reveal the single-crystalline epitaxy nature of CeO2 nanobrushes. A nanobrush memristor exhibits a threshold switching feature with an On/Off ratio of 50, as 16 times high as a thin-film memristor, and excellent endurance of up to 500 cycles and retention time of up to 104 seconds. Theoretical fitting of the I-V curves of the thin-film and nanobrush memristors show interfacial switching in the thin-film memristor and filamentary switching in the nanobrush memristor. The distinct RS mechanisms between thin films and nanobrushes suggest the fundamental role of the structural design of active oxide layers in the RS performance of oxide-based memristors.