Abstract
ABSTRACTPhoton energy from laser beams can be used to rapidly heat and melt localized regions of semiconductors with a high degree of spatial and temporal selectivity. Pulsed lasers have been successfully used to anneal displacement damage and to remove other defects. However, the number density of trapped defects increases with velocity of solidification and finally thin layers turn directly amorphous after laser-melt quenching. Annealing characteristics are found to be a strong function of ion implantation variables, which determine optical properties of materials. By both solid- and liquid-phase crystallization, supersaturated solid solutions can be formed. Residual defects in SPE grown layers primarily consist of dislocation loops. Device applications utilizing these transient thermal processing techniques are reviewed briefly.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
