Abstract
ABSTRACTPulsed laser annealing has been made for Te or Znimplanted GaP and Si-implanted GaAs in argon gas atmospheres in a pressure range of 1 to 1000 bar. Optical absorption measurement indicates that pulse annealing under pressures higher than 300 bar forms surface layers with a high crystallinity without appreciable evaporation of P or As. This pressure effect is discussed from the viewpoint of diffusion length of evaporated atoms during the annealing time.
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