Laser and Thermal Annealing Effects on the Optical Properties of n-GaAs [100] Crystals: Application to Its Schottky Diodes

Abstract

Measurements of optical absorption, reflectance and transmittance properties have been made experimentally on [100] n-GaAs crystals to study the effects of laser and thermal annealings on these materials. Experimental evidence of the deterioration of the absorption coefficient α has been observed as a function of the photon energy for different laser power densities: 12, 24, 36 and 48 mW/cm2 and for different thermal annealing temperatures in the ranges: 77 K and 20 to 200 °C. The influence of these effects has been observed in the characteristics of GaAs Schottky diode as well.