Abstract
A Q-switched ruby laser has been used to alloy deposited layers of tin on (100) GaAs. The tin concentration in the GaAs substrates has been investigated by electrical measurements, electron probe microanalysis, Rutherford backscattering and transmission electron microscopy. The results show that a high concentration of tin diffuses into the GaAs for an energy density up to 0.6 J cm−2 and the electrical properties improve with increasing energy density. However, at high energy densities this leads to the introduction of damage near the GaAs surface. At the highest energy density of 2 J cm−2, very complex dislocation networks are produced and a cellular structure results along with microcracking of the surface. This produces high levels of residual strain in the surface.
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