Abstract
The growth of thin films of lead-doped BiSrCaCuO, PbSrYCaCuO and CeO 2 by laser ablation and deposition is described. Multilayers of (BiPbSrCaCuO)/PbO were deposited on an MgO(100) single crystal at room temperature. After subsequent annealing a T c, onset of 110 K with a T c, zero of 81 K was obtained. PbSrCaYCuO thin films were grown in situ on single crystals of MgO(100). A T c, onset of 7o K and a T c, zero of 24 K were obtained. With the aim of using CeO 2 as a buffer layer in growing superconducting thin films on silicon, CeO 2 was grown in situ on Si(111) and Si(100) single-crystal substrates. The films were found to be highly oriented in the [111] direction.
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