Lase Induced Fine Structure on Si by THz-FEL Irradiation

A Irizawa,M Hashida,A Higashiya,S Suga,S Sakabe,T Nagashima

doi:10.1109/irmmw-thz.2018.8510163

Lase Induced Fine Structure on Si by THz-FEL Irradiation

A Irizawa, M Hashida + Show 4 more

https://doi.org/10.1109/irmmw-thz.2018.8510163

Copy DOI

Publication Date: Sep 1, 2018

Citations: 1

Affiliation: Kyoto University, Setsunan University, Osaka Research Institute of Industrial Science and Technology, Osaka University

#Laser Induced Periodic Surface Structure #THz Free Electron Laser + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

We report the first observation of a laser induced periodic surface structure (LIPSS) by THz-FEL (THz free electron laser) irradiation on the surface of semiconductor Si. So far LIPSS has been studied only in NIR region by fs-laser, but LIPSS found in THz-FIR region by THz-FEL shows new features, such as, the fineness of the periodic interval is close to 1/25 of the wavelength.

Full Text