Abstract

Monolayer MoS2, with fascinating mechanical, electrical, and optical properties, has generated enormous scientific curiosity and industrial interest. Controllable and scalable synthesis of monolayer MoS2 on various desired substrates has significant meaning in both basic scientific research and device application. Recent years have witnessed many advances in the direct synthesis of single-crystalline MoS2 flakes or their polycrystalline aggregates on numerous diverse substrates, such as SiO2-Si, mica, sapphire, h-BN, and SrTiO3, etc. In this work, we used the dual-temperature-zone atmospheric-pressure chemical vapor deposition method to directly synthesize large-scale monolayer MoS2 on fused silica, the most ordinary transparent insulating material in daily life. We systematically investigated the photoluminescence (PL) properties of monolayer MoS2 on fused silica and SiO2-Si substrates, which have different thermal conductivity coefficients and thermal expansion coefficients. We found that there exists a stronger strain on monolayer MoS2 grown on fused silica, and the strain becomes more obvious as temperature decreases. Moreover, the monolayer MoS2 grown on fused silica exhibits the unique trait of a fractal shape with tortuous edges and has stronger adsorbability. The monolayer MoS2 grown on fused silica may find application in sensing, energy storage, and transparent optoelectronics, etc.

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