Large-scale synthesis and photoluminescence of single-crystalline β-Ga 2O 3 nanobelts

Abstract

Gallium oxide ( β-Ga 2O 3) nanobelts were synthesized on a large scale by a simple thermal evaporation method from a mixture of gallium (Ga) and silicon oxide (SiO 2) nanopowder at 850°C in argon atmosphere, which is 200–300°C less than that of thermal evaporation methods reported formerly. The nanobelts had a uniform single-crystal monoclinic structure with width ranging from 50 to 300 nm, thickness about 10–20 nm and lengths up to several tens or hundreds of micrometers. The growth of β-Ga 2O 3 nanobelts is controlled by vapor–solid crystal growth mechanism. Photoluminescence measurement shows that the nanobelts have one broad, strong blue emission and a UV emission.