Large-scale assembly of highly flexible low-noise devices based on silicon nanowires

Abstract

Recently, integrated flexible devices based on silicon nanowires (Si-NWs) have receivedsignificant attention as high performance flexible devices. However, most previous assemblymethods can generate only specifically-shaped devices and require unconventional facilities,which has been a major hurdle for industrial applications. Herein, we report a simple butvery efficient method for assembling Si-NWs into virtually generally-shape patterns onflexible substrates using only conventional microfabrication facilities, allowing usto mass-produce highly flexible low-noise devices. As proof of this method, wedemonstrated the fabrication of highly bendable top-gate transistors based on Si-NWs.These devices showed typical n-type semiconductor behaviors, and exhibited amuch lower noise level compared to previous flexible devices based on organicconductors or other nanowires. In addition, the gating behaviors and low-noisecharacteristics of our devices were maintained, even under highly bent conditions.