Abstract
Electroluminescence (EL) efficiency of a blue In0.3Ga0.7N multiple-quantum-well diode has been investigated as a function of current between 0.001 and 20mA at various temperatures (20–300K). The low-temperature EL quenching previously observed below 100K at a driving current of 20mA does not occur at 0.001mA and is found to be strongly dependent on the current level. Largely variable temperature-dependent EL quantum efficiency with current suggests that the injected carrier capture efficiency by radiative recombination centers plays a decisive role for determination of the EL efficiency under the forward bias condition.
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