Abstract
A thickening polycrystalline silicon (pc-Si) layer with a grain size of 35 μm was grown on an aluminum-induced crystallization (AIC) Si film, with low and high hydrogen dilution. An AIC seed layer was grown on a glass substrate, and a pc-Si epitaxial layer was deposited on it at 450°C by hot-wire chemical vapor deposition. The AIC seed layer exhibits a highly crystalline structure and enhances the growth of the pc-Si layer. The crystalline fraction (93%) with high hydrogen dilution was larger than that (21%) with low hydrogen dilution, owing to low activation energy for nucleation and grain growth.
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