Abstract

A large‐area, ultrathin metasurface perfect absorber (MSPA) based on coupled Mie resonances from integrated arrays of silicon (Si) and metallic pillars is reported. In contrast to previous structures and mechanisms, coupled Mie resonances are generated from two pillars of dissimilar materials (dielectric and metallic) within an ultrathin structure such that the Mie resonances of dielectric and metallic patterns occur complementarily at different wavelengths to realize broadband absorption over the entire visible wavelength band. Double‐beam interference lithography, reactive ion etching, and sputter coated depositions are utilized to fabricate the proposed MSPA. With an appropriate arrangement of the patterned geometry, an average polarization independent absorption of 0.975 (0.958, experiment) in the entire visible band (from 400 to 760 nm) is achieved and remains high (0.930, simulation, and 0.912, experiment) when the incident angle increases to 70°. The proposed MSPA is thus an effective way to realize a large‐area, ultrathin metasurface absorber with a relatively simple and easy to fabricate structure.

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