Abstract
Reports on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. The low-pressure barrel reactor can grow twelve 3-inch wafers at a time. It is shown that the grown layers meet the demands for LSI application. The authors fabricated HEMT devices with gates 0.6 mu m long using photolithography, with excellent characteristics. They applied the MOVPE technique to HEMT 64 Kb SRAM and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W. >
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