Abstract
Abstract This paper reports on a 100 cm 2 single crystalline silicon solar cell with a conversion efficiency of 19.44% ( J sc = 37.65 mA/cm 2 , V oc = 638 mV, FF = 0.809). The cell structure is as simple as only applying the textured surface, oxide passivation, and back surface field by the screen printing method. The comparison between cell performances of the CZ (Czochralski) and FZ (Floating zone) silicon substrates was investigated. The higher efficiency cells were obtained for the FZ substrate rather than the CZ substrate. The influence of the phosphorus concentration of the emitter on the cell efficiency has also been investigated. A good result was obtained when the surface concentration of phosphorus was 3 × 10 20 cm −3 and the junction depth was about 0.6 μm.
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