Abstract
A GaAs solar cell with an area of 2 cm*4 cm fabricated from a film grown by molecular beam epitaxy (MBE) on a 5.08-cm-diameter GaAs substrate is discussed. This is the largest device ever fabricated from MBE material. The cell demonstrated an efficiency of 21.7% under one-sun AM1.5 conditions at 25 degrees C and 18.8% under one-sun AM0 conditions at 28 degrees C. >
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