Large voltage modulation in superconducting quantum interference devices with submicron-scale step-edge junctions

Abstract

A promising direction to improve the sensitivity of a SQUID is to increase its junction's normal resistance value, Rn, as the SQUID modulation voltage scales linearly with Rn. As a first step to develop highly sensitive single layer SQUID, submicron scale YBCO grain boundary step edge junctions and SQUIDs with large Rn were fabricated and studied. The step-edge junctions were reduced to submicron scale to increase their Rn values using focus ion beam, FIB and the measurement of transport properties were performed from 4.3 to 77 K. The FIB induced deposition layer proves to be effective to minimize the Ga ion contamination during the FIB milling process. The critical current–normal resistance value of submicron junction at 4.3 K was found to be 1–3 mV, comparable to the value of the same type of junction in micron scale. The submicron junction Rn value is in the range of 35–100 Ω, resulting a large SQUID modulation voltage in a wide temperature range. This performance promotes further investigation of cryogen-free, high field sensitivity SQUID applications at medium low temperature, e.g. at 40–60 K.