Abstract
We have studied electro-optical properties of nanostructured-thin film electroluminescent devices(NS-TFELD) with a nanosized-tantalum pentoxide(Ta2O5) insulator layer inserted into the ZnS:Mn phosphor layer. A large threshold voltage shift ΔVth has been observed in NS-TFELD. The change in the transferred charge △Q seems to relate to the large shifts of ΔVth, implying that the change in interface states due to the nanosized oxide layer will be responsible for the shifts of Vth.
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