Abstract
We have performed statistical compact modeling of low-frequency (LF) noise in MOSFETs under large signal periodic (AC or cyclo-stationary) excitation, addressing relevant open issues in the literature. In the present work we introduce an equivalent Fermi level for cyclo-stationary excitation, unifying modeling of LF noise under constant (DC) bias and large signal periodic excitation. Results are compared to relevant experimental data from the literature, and Monte Carlo simulations are performed. The model is optimized for implementation into standard circuit simulators.
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