Large-signal nonquasi-static model for single and double heterojunction bipolar transistors

Abstract

A large-signal nonquasi-static model for heterojunction bipolar transistors (HBTs) is presented. Using this model, the turn-on and turn-off transient characteristics were simulated. The simulation results obtained using this model and that of Gummel-Poon model are compared with the results obtained numerically. This comparison shows that our model can more accurately predict the device transient performance. The model accuracy can be improved even further if nonquasi-static junction capacitance models are used. Using our model, it will be possible to simulate digital circuits in the gigabit range.