Abstract
A physically based, large signal heterojunction bipolar transistor (HBT) model is presented to account for the time dependence of the base, collector, and emitter charging currents, as well as self heating effects. The model tracks device performance over eight decades of current. The model can be used as the basis of SPICE modeling approximations, and to this end, examples are presented. A thesis for the divergence of high frequency large signal SPICE simulations from measured data is formulated, including a requisite empirical equation for the base-collector junction capacitance. >
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