Abstract
In this paper, an accurate table-based large-signal model for AlGaN/GaN HEMTs accounting for trapping- and self-heating-induced current dispersion is presented. The B-spline-approximation technique is used for the model-element construction, which improves the intermodulation-distortion (IMD) simulation. The dynamic behavior of the trapping and self-heating processes is taken into account in the implementation of the model. The model validity is verified by comparing the simulated and measured outputs of the device tested under pulsed and continuous large-signal excitations for devices of 1-mm gate width. Single- and two-tone simulation results show that the model can efficiently predict the output power and its harmonics and the associated IMD under different input-power and bias conditions.
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