Abstract
This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.
Highlights
The performance of AlGaN/GaN high-electron mobility transistors (HEMTs) technology is limited by charge trapping effects
Most works focus on the performance of the passivated AlGaN/GaN HEMTs at room temperature
The TiO2 film was sputtered in a sputtering system passivation is referred to as TiO2 -HEMT
Summary
The AlGaN/GaN heterostructure has the advantage of large electron velocity and high breakdown electric field. The performance of AlGaN/GaN HEMT technology is limited by charge trapping effects. Most works focus on the performance of the passivated AlGaN/GaN HEMTs at room temperature. The room-temperature characteristics of AlGaN/GaN HEMT with. AlGaN/GaN heterostructure is a promising material system for high-temperature electronics. The high-temperature characteristics of the passivated AlGaN/GaN HEMTs are measured . The large-signal linearity of the passivated AlGaN/GaN HEMTs are studied. Experimental results demonstrate the high-performance passivated HEMT with stable operation at elevated temperatures up to 420 K. The measured large-signal linearity and high-frequency noise of the passivated.
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