Abstract
In this paper, a GaN HEMT transistor is characterized at 3.5 GHz by passive multi-harmonic source & load pull tuner system in large signal. In order to analyze the effect on PAE and output power from the source and load impedance at fundamental, 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> and 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> harmonic frequencies, multi-harmonic source and load pull tuner are used. By using this source & load pull tuner system, Cree's GaN HEMT CGH40010 transistor is characterized at 3.5 GHz with considering the source and load impedances at 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> and 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> harmonic frequencies. The characterization result shows that maximum PAE could reach 74.21% with 39.92 dBm output power.
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